Trap-mediated bipolar charge transport in NiO/Ga2O3 p+-n heterojunction power diodes
نویسندگان
چکیده
The construction of p-NiO/n-Ga2O3 heterojunction becomes a popular alternative to overcome the technological bottleneck p-type Ga2O3 for developing bipolar power devices practical applications, whereas identification performance-limiting traps and transport dynamics are still not exploited yet. To this end, fundamental correlation carrier transport, trapping recombination kinetics in NiO/β-Ga2O3 p+-n diodes has been investigated. quantitative modeling temperature-dependent current-voltage characteristics indicates that modified Shockley-Read-Hall mediated by majority trap states with an activation energy 0.64 eV dominates trap-assisted tunneling process forward subthreshold conduction regime, while minority diffusion near-unity ideality factors is overwhelming at bias over turn-on voltage. leakage mechanism high reverse biases governed Poole-Frenkel emissions through β-Ga2O3 bulk barrier height 0.75 eV, which supported level EC − isothermal capacitance transient spectroscopic analysis. These findings bridge knowledge gap between charge deep-level behaviors Ga2O3, crucial understand reliability rectifiers.
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ژورنال
عنوان ژورنال: Science China. Materials
سال: 2022
ISSN: ['2095-8226', '2199-4501']
DOI: https://doi.org/10.1007/s40843-022-2244-y